It is possible to tune the strength of interaction between amorphous chalcogenide thin films and electron beam by controlling their physical properties. Our previous studies indicate that this interaction is strongest with glasses with smallest electrical conductivity. The type of the surface relief formed during electron irradiation is also strongly dependent on the electron dose. We compare sensitivity of thin films with two compositions; namely Ge9As9Se82 and Ge16As24Se60 which have maximal and minimal electrical conductivity respectively, and find that not only latter film is more sensitive to electron irradiation but also at some dose ranges forms very peculiar shapes such as doughnut shapes craters or rings structures within craters (see the figure below). The results of our study we published in Journal of Non-crystalline solids 505 (2019) 37 – 42 with impact factor 2.488.
